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Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
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10.1063/1.3430572
/content/aip/journal/apl/96/21/10.1063/1.3430572
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3430572
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Bulk-sensitive, normalized , , , , and core orbitals after background removal. (a) Freshly grown , (b) after 1.3 nm deposition by MBD, (c) after 30 s Si oxidation with atomic O plasma, and (d) freshly grown after the deposition of nominally 2 nm by MBD.

Image of FIG. 2.
FIG. 2.

Surface-sensitive, normalized , , and core orbitals after background removal. (a) Freshly grown , (b) after 1.3 nm deposition by MBD, (c) after 30 s Si oxidation with atomic O plasma, and (d) freshly grown after the deposition of nominally 2 nm by MBD.

Image of FIG. 3.
FIG. 3.

(a) characteristics measured on -passivated (open symbols) and Si-passivated (solid symbols) FETs. (b) characteristics of MOSFETs fabricated with Al/6.6 nm and Al/7 nm gate stacks. Activation anneal in for 60 s at and at as indicated in the figure.

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/content/aip/journal/apl/96/21/10.1063/1.3430572
2010-05-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3430572
10.1063/1.3430572
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