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Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
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10.1063/1.3430572
/content/aip/journal/apl/96/21/10.1063/1.3430572
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3430572
/content/aip/journal/apl/96/21/10.1063/1.3430572
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/content/aip/journal/apl/96/21/10.1063/1.3430572
2010-05-24
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3430572
10.1063/1.3430572
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