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Modulation of dislocation-related luminescence emitted from a direct silicon bonded interface by external bias
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10.1063/1.3431580
/content/aip/journal/apl/96/21/10.1063/1.3431580
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3431580
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

CL and DLTS spectra emitted from the DSB GBs. (a) The CL spectra; (b) The DLTS spectra.

Image of FIG. 2.
FIG. 2.

CL scanning micrographs of the homo-DSB1 GB under different external bias voltages.

Image of FIG. 3.
FIG. 3.

DLTS spectra of the homo-DSB1 GB obtained by applying different filling pulse voltages.

Image of FIG. 4.
FIG. 4.

(a) Energy band diagram near the p-type homo-DSB GB under an external voltage bias; (b) the equivalent circuit of homo-DSB sample (R1, R2: series resistances; R3: shunt resistance); (c) The dependence of hole density at the D1h level and electron density at the D1e level on external bias voltage; (d) The experimental D1 luminescence (circle symbols) and the calculated radiative recombination rate (solid line) as a function of external bias voltage.

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/content/aip/journal/apl/96/21/10.1063/1.3431580
2010-05-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modulation of 1.5 μm dislocation-related luminescence emitted from a direct silicon bonded interface by external bias
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3431580
10.1063/1.3431580
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