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Surface transfer hole doping of epitaxial graphene using thin film
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10.1063/1.3441263
/content/aip/journal/apl/96/21/10.1063/1.3441263
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3441263
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Synchrotron PES spectra in the low-kinetic energy region (secondary electron cutoff) during the deposition of on EG. Spectra are measured with photon energy of 60 eV. (b) The plot of the sample work function and of EG as a function of the coverage.

Image of FIG. 2.
FIG. 2.

Synchrotron PES core level spectra during the deposition of on EG: (a) , (b) , and (c) . All spectra are measured with photon energy of 350 eV.

Image of FIG. 3.
FIG. 3.

Dispersion of -bands for (a) as grown bilayer graphene on 4H–SiC(0001) and (b) after deposition of 0.2 nm , as measured by ARPES with photon energy of 60 eV and at room temperature.

Image of FIG. 4.
FIG. 4.

Schematic energy diagrams show the effective surface transfer hole doping of EG using thin film.

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/content/aip/journal/apl/96/21/10.1063/1.3441263
2010-05-25
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface transfer hole doping of epitaxial graphene using MoO3 thin film
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3441263
10.1063/1.3441263
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