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Capacitance-voltage characteristics of epitaxial heterostructures
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10.1063/1.3441400
/content/aip/journal/apl/96/21/10.1063/1.3441400
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3441400
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagrams of (a) a MIS capacitor and (b) a MIM capacitor.

Image of FIG. 2.
FIG. 2.

XRD scan of the heterostructure composed of grown on a (001) substrate. Inset shows an XRD -scan on 222 reflection of the layer.

Image of FIG. 3.
FIG. 3.

(a) Measured curves of the MIS capacitor and the MIM capacitor with an equivalent circuit. (b) plot of the MIS capacitor for positive voltages. The slope of the plot indicates a carrier concentration of .

Image of FIG. 4.
FIG. 4.

Calculated curves of the MIS capacitor with different in . When , the calculated curve shows good agreement with the measurement, consistent with the estimation in Fig. 3(b).

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/content/aip/journal/apl/96/21/10.1063/1.3441400
2010-05-27
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Capacitance-voltage characteristics of SrTiO3/LaVO3 epitaxial heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3441400
10.1063/1.3441400
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