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Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel junctions
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10.1063/1.3441409
/content/aip/journal/apl/96/21/10.1063/1.3441409
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3441409
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Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional HRTEM image of Fe (30 nm)/[Mg (1.04 nm)/Al(1.16 nm)]-/Fe(5 nm) structure along [110] direction of Fe layers with dislocation circled. (b) Nanoelectron beam diffraction pattern for (MgAl)- barrier. Dashed squares indicate nearest diffraction spots of spinel structure. (c) Two-dimensional lattice model of epitaxial relationship between Fe and spinel (001) layers. (d) Schematic illustration of spinel structure.

Image of FIG. 2.
FIG. 2.

TMR (open circles) and RA (filled squares) for MTJs as a function of . All measurements were carried out at RT.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependence of TMR (solid line) and RA (dashed lines) for MTJ with of 0.91 nm. (b) Resistance-magnetic field curves measured at 15 and 298 K.

Image of FIG. 4.
FIG. 4.

Bias voltage dependence of normalized TMR ratio for MTJ with of 0.91 nm measured at RT.

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/content/aip/journal/apl/96/21/10.1063/1.3441409
2010-05-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel MgAl2O4/Fe(001) junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3441409
10.1063/1.3441409
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