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Room temperature light output-current characteristics of AlGaN multiple-quantum-well UV laser diode. The inset shows a room temperature lasing spectrum with a peak wavelength of 354.2 nm at a current density of under pulsed mode.
Curve fitting results of injection current density as a function of light intensity using Eq. (3a) below threshold. The solid square and the broken line represent experimental data and the best fitting curve, respectively. The inset shows residual plot for the fitting.
(a) Estimated internal quantum efficiency as a function of injection current density below threshold using Eq. (4). (b) Peak wavelength dependence on current density of AlGaN multiple-quantum-well UV laser diode.
Carrier density (solid circle) and radiative carrier lifetime (open square) as a function of injection current density below threshold. The radiative coefficient at room temperature is assumed to be (Refs. 15–17) under calculation.
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