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Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode
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10.1063/1.3442918
/content/aip/journal/apl/96/21/10.1063/1.3442918
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3442918
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room temperature light output-current characteristics of AlGaN multiple-quantum-well UV laser diode. The inset shows a room temperature lasing spectrum with a peak wavelength of 354.2 nm at a current density of under pulsed mode.

Image of FIG. 2.
FIG. 2.

Curve fitting results of injection current density as a function of light intensity using Eq. (3a) below threshold. The solid square and the broken line represent experimental data and the best fitting curve, respectively. The inset shows residual plot for the fitting.

Image of FIG. 3.
FIG. 3.

(a) Estimated internal quantum efficiency as a function of injection current density below threshold using Eq. (4). (b) Peak wavelength dependence on current density of AlGaN multiple-quantum-well UV laser diode.

Image of FIG. 4.
FIG. 4.

Carrier density (solid circle) and radiative carrier lifetime (open square) as a function of injection current density below threshold. The radiative coefficient at room temperature is assumed to be (Refs. 15–17) under calculation.

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/content/aip/journal/apl/96/21/10.1063/1.3442918
2010-05-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/21/10.1063/1.3442918
10.1063/1.3442918
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