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Improvement of resistance switching characteristics in a thin transition layer of structure by rapid annealing
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View: Figures


Image of FIG. 1.
FIG. 1.

XRD scan results for the structures with and without a , 60 s RTA. Symbol (◆) indicates the additional diffraction peaks appeared only in the RTA sample and contributed from the crystallinity of phases.

Image of FIG. 2.
FIG. 2.

XPS depth profiles of Fe on the structures (a) with and (b) without a , 60 s RTA. The depth profiles are obtained by an Ar sputter etching in the layer, collecting the XPS data at various depths. The etching times of the spectra are from bottom to top 300, 320, 340, and 360 s.

Image of FIG. 3.
FIG. 3.

50 cycles of bipolar switching behaviors of (a) the RTA sample and (b) the as-deposited sample with compliance current 5 mA. The arrows indicate voltage sweeping directions.

Image of FIG. 4.
FIG. 4.

The retention characteristics of the as-deposited sample and the RTA sample at room temperature. Both of the LRS and HRS are kept stable over time of .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing