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(a) PQ. (b) The proposed reaction between PQ and silicon (100) dimmer (Ref. 7 ). The reaction consumes the dangling bonds while preserving the aromatic -conjugation of PQ. This reduces the surface defect density, allowing the formation of electrically passivated but conducting organic-silicon interfaces.
(a) PQ-passivated metal-insulator-semiconductor capacitor structure. The insulator is AZ5124 polymer resin. (b) The small-signal capacitance (1 MHz) of a metal-insulator-semiconductor capacitor on p-type silicon.
(a) The n-channel MISFET device structure. The L and W of the devices are and , respectively. (b) Drain current vs drain voltage characteristics at different gate voltages .
The calculated minority carrier recombination lifetimes in silicon at average minority carrier density of and extracted SRV for both p and n-type substrates. The three conditions represent different surface treatments; passivated with a high-quality thermal oxide, unpassivated (native oxide), and PQ-passivated.
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