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Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature
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10.1063/1.3429586
/content/aip/journal/apl/96/22/10.1063/1.3429586
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/22/10.1063/1.3429586
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) spectra of a-IGZO with and without time-varied UV irradiation extracted from optical three-phase modeling from SE. The Tauc plot ( where is absorption coefficient and E is photon energy) of absorption spectra for the as-deposited a-IGZO in the inset. (b) VB edge XPS spectra of a-IGZO with and without time-varied UV irradiation.

Image of FIG. 2.
FIG. 2.

(a) a-IGZO TFT transfer characteristics and output characteristics in the inset. The plot confirms that a-IGZO TFTs were working in the typical enhanced FFT operation mode. (b) Plot of carrier concentration in the surface channel layer, n and field-effect mobility, of TFTs against UV irradiation time.

Image of FIG. 3.
FIG. 3.

(a) Schematic illustration for qualitative model of two photon UV absorptions in a-IGZO and the asymmetric charge separation induced hole scavenging process in TFT stacks under UV irradiation. The change in the a-IGZO band edge structure is also shown (right). (b) The plots of shift between UV irradiated and nonirradiated TFTs and effectively trapped hole density from C-V analysis as a function of UV irradiation time.

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/content/aip/journal/apl/96/22/10.1063/1.3429586
2010-06-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/22/10.1063/1.3429586
10.1063/1.3429586
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