Full text loading...
(a) Schematic of fabricated devices with silicon nanocrystals. (b) Cross-sectional TEM image of a device showing the array of silicon nanocrystals between the tunneling and the blocking silicon nitride layers. The dotted line shows the boundary between the tunneling silicon nitride and the -Si (100) substrate. (c) Plan-view TEM image of the silicon nanocrystals. The diameter was estimated to be 5.0 nm. (d) Schematic band diagram of the device in flat-band condition.
(a) characteristics of the device containing silicon nanocrystals with average diameter of 5.0 nm. (b) Measured as a function of . The positive and negative corresponds to electron and hole injection, respectively. Arrows indicate the , which is the starting point for significant charging. was determined from the intercept with the axis by linear extrapolation (solid lines) of data points.
(a) Calculated vs . Dashed lines indicate corresponding to . The inset shows the measured and on the band diagram. (b) PL spectrum for the silicon nanocrystals with average diameter of 5.0 nm.
Article metrics loading...