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Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy
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10.1063/1.3431572
/content/aip/journal/apl/96/22/10.1063/1.3431572
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/22/10.1063/1.3431572
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of fabricated devices with silicon nanocrystals. (b) Cross-sectional TEM image of a device showing the array of silicon nanocrystals between the tunneling and the blocking silicon nitride layers. The dotted line shows the boundary between the tunneling silicon nitride and the -Si (100) substrate. (c) Plan-view TEM image of the silicon nanocrystals. The diameter was estimated to be 5.0 nm. (d) Schematic band diagram of the device in flat-band condition.

Image of FIG. 2.
FIG. 2.

(a) characteristics of the device containing silicon nanocrystals with average diameter of 5.0 nm. (b) Measured as a function of . The positive and negative corresponds to electron and hole injection, respectively. Arrows indicate the , which is the starting point for significant charging. was determined from the intercept with the axis by linear extrapolation (solid lines) of data points.

Image of FIG. 3.
FIG. 3.

(a) Calculated vs . Dashed lines indicate corresponding to . The inset shows the measured and on the band diagram. (b) PL spectrum for the silicon nanocrystals with average diameter of 5.0 nm.

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/content/aip/journal/apl/96/22/10.1063/1.3431572
2010-06-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/22/10.1063/1.3431572
10.1063/1.3431572
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