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On direct-writing methods for electrically contacting GaAs and Ge nanowire devices
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10.1063/1.3441404
/content/aip/journal/apl/96/22/10.1063/1.3441404
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/22/10.1063/1.3441404
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured source-drain I-V traces on (a) an EBL-contacted GaAs NW for (2.5 V increment) and (b) an EBID-contacted Ge NW (, 3 V increment). The inset in (a) is an SEM top-view of the EBID contacts on the GaAs NW.

Image of FIG. 2.
FIG. 2.

I-V traces before (solid) and after (dashed) ion beam irradiation of EBID-contacted (a) GaAs and (b) Ge NWs.

Image of FIG. 3.
FIG. 3.

I-V traces for (a) GaAs and (b) Ge NWs collected before (solid) and after (dashed) an IBID Pt patch was deposited from each NW. Inset: SEM image of the IBID Pt patch in relation to the GaAs NW. (scale: ).

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/content/aip/journal/apl/96/22/10.1063/1.3441404
2010-06-02
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On direct-writing methods for electrically contacting GaAs and Ge nanowire devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/22/10.1063/1.3441404
10.1063/1.3441404
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