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Negative differential resistance and resistive switching behaviors in nanowire devices
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10.1063/1.3442919
/content/aip/journal/apl/96/22/10.1063/1.3442919
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/22/10.1063/1.3442919
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Figures

Image of FIG. 1.
FIG. 1.

(a) A schematic illustration of the nanowires and measurement setup. (b) A transmission electron microscopy image showing the contact between the sample and a probe. The insets show the side view (upper) and the cross section (lower) of the core/shell structure. Thicker ZnO coating was used in the measurements. (c) A typical I-V curve showing both the NDR and RS features.

Image of FIG. 2.
FIG. 2.

I-V plots at various scan rates. With a larger scan rate, the diode was turned on at a larger bias when scan from “−” to “” (denoted “n”) and a larger NDR peak appeared in the reverse “p” scan. Inset: semilog scale plot.

Image of FIG. 3.
FIG. 3.

(a) NDR peak diminishes at slow scan rate of 2 mV/s. [(b) and (c)] Comparison of I-V plots with or without ZnO.

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/content/aip/journal/apl/96/22/10.1063/1.3442919
2010-06-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Negative differential resistance and resistive switching behaviors in Cu2S nanowire devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/22/10.1063/1.3442919
10.1063/1.3442919
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