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Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation
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10.1063/1.3446834
/content/aip/journal/apl/96/22/10.1063/1.3446834
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/22/10.1063/1.3446834
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the A-plane AlN p–n junction LED structure and experimental setup for EL measurement.

Image of FIG. 2.
FIG. 2.

I-V characteristics of the A-plane AlN p–n junction LED.

Image of FIG. 3.
FIG. 3.

(a) EL spectra of the A-plane AlN p–n junction LED at polarizer orientation , 45°, and 90°. (b) EL intensity as a function of the polarizer orientation.

Image of FIG. 4.
FIG. 4.

Radiation patterns and schematics of radiation along (a) the m-axis of the A-plane AlN LED, (b) the c-axis of the A-plane AlN LED, and (c) for the C-plane AlN LED. In [(a)–(c)] on the left, symbols are the experimental data and solid lines are calculated radiation patterns.

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/content/aip/journal/apl/96/22/10.1063/1.3446834
2010-06-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/22/10.1063/1.3446834
10.1063/1.3446834
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