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Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
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10.1063/1.3446889
/content/aip/journal/apl/96/22/10.1063/1.3446889
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/22/10.1063/1.3446889
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic sketch of in-plane potential variations due to local well width fluctuations and composition fluctuations (a) or due to local energy-activated defect states (b).

Image of FIG. 2.
FIG. 2.

Microscopically calculated radiative loss coefficient as function of the sheet carrier density per well. The results for the 410 nm device from Ref. 4 are shown in black and for the 530 nm device from Ref. 10 in gray.

Image of FIG. 3.
FIG. 3.

Internal efficiencies as function of the current-density at 300 K. (a) and (b) experimental data from Refs. 4 and 10. Circles/squares: experimental data for electrical/resonant optical excitation. Solid black line: theory assuming DADR with a dependence. The listed carrier densities are for this case. Solid gray line: without broadening of the loss currents. Dotted line: assuming . Dashed gray line in (a) fit according to Ref. 4. Dashed black line in (a) with a dependence for DADR. Horizontal bars indicate the read-out error from the graph with linear -axis in Ref. 4.

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/content/aip/journal/apl/96/22/10.1063/1.3446889
2010-06-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/22/10.1063/1.3446889
10.1063/1.3446889
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