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Response function in the ideal case of no carriers outside QDs at different values of the dc component of the injection current density. In Figs. 1–4, a GaInAsP structure of Ref. 13 lasing at near is considered. , (10% QD-size fluctuations), , and ; and . The cavity length . At these parameters, and (see also Fig. 2).
Modulation bandwidth , peak frequency of the response function , relaxation oscillation frequency , , and vs dc component of the injection current density in the ideal case of no carriers outside QDs. The vertical dashed line marks .
The upper limit for the modulation bandwidth of a single QD-layer laser vs maximum modal gain and overlap integral of the electron and hole wave functions in a QD.
Optimum dc injection current density maximizing the modulation bandwidth ( at ) vs number of QD-layers in the actual case of carriers outside QDs.
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