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Low-threshold-current-density AlGaN-cladding-free -plane InGaN/GaN laser diodes
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10.1063/1.3443719
/content/aip/journal/apl/96/23/10.1063/1.3443719
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/23/10.1063/1.3443719
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Figures

Image of FIG. 1.
FIG. 1.

(a) Calculated 1D transverse mode profile for the device structure. (b) L-I characteristics collected before and after facet coating for an long by wide ridge waveguide LD. Inset: lasing spectra collected before and after facet coating.

Image of FIG. 2.
FIG. 2.

(a) Dependence of EL spectra on drive current. (b) Dependence of EL peak wavelength and EL FWHM on current density. (c) Dependence of threshold current and lasing wavelength on stage temperature.

Image of FIG. 3.
FIG. 3.

Dependence of best reported threshold current density on lasing wavelength for semipolar, nonpolar, and -plane InGaN/GaN LDs. Based on information from Refs. 2 and 7–17. For cases where both pulsed and continuous wave results were reported, the lower threshold current density of the two is shown. In addition, for cases where self-heating effects were reported to increase the lasing wavelength, the lasing wavelength under conditions of minimal heating is shown.

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/content/aip/journal/apl/96/23/10.1063/1.3443719
2010-06-10
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/23/10.1063/1.3443719
10.1063/1.3443719
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