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The typical FESEM and AFM images of uncapped Ge quantum dots on Si (001) substrate grown at a temperature by molecular beam epitaxy (MBE).
The temperature dependent PL spectra of the Ge QDs on Si substrate. Inset curves show the four deconvoluted Gaussian peaks of quantum dot related PL bands at 10 K.
The dark current density-voltage characteristics of Ge QDIP measured at low temperatures. Inset curve shows excitonic voltage developed at heterointerface by the infrared excitation at different temperatures.
The (a) NWIR and (b) MWIR PC spectra of capped Ge/Si QDs at different temperatures. The inset of the respective curve shows the PC under different reverse bias conditions.
A schematic energy band diagram is drawn for the self-assembled Ge (001) substrate at zero applied bias (see details in text). The energy values shown in the diagram are in milli—electron volt (meV).
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