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Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers
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10.1063/1.3446967
/content/aip/journal/apl/96/23/10.1063/1.3446967
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/23/10.1063/1.3446967
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Heterostructure schematic and (b) XRD plot of PbIbN design.

Image of FIG. 2.
FIG. 2.

(a) Equilibrium band diagram showing CB and VB at 77 K and electric field profile across the device at −0.25 V of applied bias for the PbIbN design. (b) Spectral response of PbIbN and PIN designs at −0.2 V of applied bias at 77 K.

Image of FIG. 3.
FIG. 3.

Dark current density of PbIbN and PIN designs vs applied bias at different temperatures.

Image of FIG. 4.
FIG. 4.

(a) Responsivity and QE as a function of applied bias for the PbIbN design at . (b) Calculated shot noise limited for PbIbN and PIN designs at at different temperatures and bias values.

Image of FIG. 5.
FIG. 5.

Background photocurrent density and dark current densities at different temperatures.

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/content/aip/journal/apl/96/23/10.1063/1.3446967
2010-06-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/23/10.1063/1.3446967
10.1063/1.3446967
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