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(a) Heterostructure schematic and (b) XRD plot of PbIbN design.
(a) Equilibrium band diagram showing CB and VB at 77 K and electric field profile across the device at −0.25 V of applied bias for the PbIbN design. (b) Spectral response of PbIbN and PIN designs at −0.2 V of applied bias at 77 K.
Dark current density of PbIbN and PIN designs vs applied bias at different temperatures.
(a) Responsivity and QE as a function of applied bias for the PbIbN design at . (b) Calculated shot noise limited for PbIbN and PIN designs at at different temperatures and bias values.
Background photocurrent density and dark current densities at different temperatures.
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