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(a) AFM image of InAs QRs formed by postepitaxy thermal annealing of QDs. Inset shows a magnified image and dimensions; (b) calculated ground state energy in the QR as a function of ring height for ring width . Inset shows the schematic of the QR and calculated bound state in a QR with and . The transition energy of 7.89 meV corresponds to 1.91 THz.
(a) Heterostructure schematic of QRID grown by MBE. It has ten layers of InAs QRs in the active region and a single barrier at the end; (b) dark current characteristics at two different temperatures (4.2 and 80 K). Inset shows the conduction band profiles in the active region for forward and reverse bias.
Measured spectral responsivity of QRID for (a) different reverse biases measured at 5.2 K, and (b) 1 V bias measured at 5.2 K. The inset to (b) shows the responsivity at 10 K under 1 V bias.
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