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High-performance quantum ring detector for the 1–3 terahertz range
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) AFM image of InAs QRs formed by postepitaxy thermal annealing of QDs. Inset shows a magnified image and dimensions; (b) calculated ground state energy in the QR as a function of ring height for ring width . Inset shows the schematic of the QR and calculated bound state in a QR with and . The transition energy of 7.89 meV corresponds to 1.91 THz.

Image of FIG. 2.
FIG. 2.

(a) Heterostructure schematic of QRID grown by MBE. It has ten layers of InAs QRs in the active region and a single barrier at the end; (b) dark current characteristics at two different temperatures (4.2 and 80 K). Inset shows the conduction band profiles in the active region for forward and reverse bias.

Image of FIG. 3.
FIG. 3.

Measured spectral responsivity of QRID for (a) different reverse biases measured at 5.2 K, and (b) 1 V bias measured at 5.2 K. The inset to (b) shows the responsivity at 10 K under 1 V bias.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance quantum ring detector for the 1–3 terahertz range