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Origin of pyramidal hillocks on GaN thin films grown on free-standing -plane GaN substrates
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10.1063/1.3447926
/content/aip/journal/apl/96/23/10.1063/1.3447926
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/23/10.1063/1.3447926
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Nomarski optical micrograph of the surface of sample A. (b) Schematic of a four-sided pyramidal hillock showing the nomenclature used for the different faces of the hillock. (c) Representative CL image of a pyramidal hillock from sample A. Inset shows an enlarged view (50% magnification) of the apex of the pyramidal hillock.

Image of FIG. 2.
FIG. 2.

(a) Large-area low-resolution AFM amplitude image of the surface morphology of sample B near the apex of a pyramidal hillock. (b) Small-area high-resolution AFM height image of the surface morphology of sample B near the apex of a different pyramidal hillock. Both images were taken in tapping mode.

Image of FIG. 3.
FIG. 3.

(a) Schematic showing the progression of spiral hillock growth in the vicinity of a screw-component TD for and . (b) Schematic showing the progression of step flow growth in the vicinity of a screw-component TD for and . Upper terraces are denoted by a “u” and lower terraces are denoted by a “d.”

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/content/aip/journal/apl/96/23/10.1063/1.3447926
2010-06-09
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/23/10.1063/1.3447926
10.1063/1.3447926
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