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Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
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10.1063/1.3449557
/content/aip/journal/apl/96/23/10.1063/1.3449557
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/23/10.1063/1.3449557
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Integrated EL intensity and normalized EQE as a function of forward current density for c-plane LED and m-plane LED, respectively. Both samples have the same MQW active region and EBL structure.

Image of FIG. 2.
FIG. 2.

(a) Calculated band diagram of m-plane LED and reference c-plane LED under forward bias operation. (b) Simulated electron current density throughout the whole m-plane LED structure as well as c-plane LED structure at 20 and 100 mA forward current.

Image of FIG. 3.
FIG. 3.

Distribution of carrier concentration of InGaN/GaN MQWs structure at 20 mA forward current density for (a) m-plane LED and (b) c-plane LED.

Image of FIG. 4.
FIG. 4.

Experimental and simulated normalized EQE as a function of forward current density for c-plane LED and m-plane LED.

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/content/aip/journal/apl/96/23/10.1063/1.3449557
2010-06-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/23/10.1063/1.3449557
10.1063/1.3449557
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