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Integrated EL intensity and normalized EQE as a function of forward current density for c-plane LED and m-plane LED, respectively. Both samples have the same MQW active region and EBL structure.
(a) Calculated band diagram of m-plane LED and reference c-plane LED under forward bias operation. (b) Simulated electron current density throughout the whole m-plane LED structure as well as c-plane LED structure at 20 and 100 mA forward current.
Distribution of carrier concentration of InGaN/GaN MQWs structure at 20 mA forward current density for (a) m-plane LED and (b) c-plane LED.
Experimental and simulated normalized EQE as a function of forward current density for c-plane LED and m-plane LED.
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