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The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization
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10.1063/1.3452345
/content/aip/journal/apl/96/23/10.1063/1.3452345
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/23/10.1063/1.3452345
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental vs anneal time for n-type doped germanium layers. SPER was done at either 400 or . All the post-SPER anneals were done at .

Image of FIG. 2.
FIG. 2.

Modeled vs maximum active concentration for P implants with different energies, assuming concentration dependent carrier mobility. The maximum and minimum experimental data are shown on the 15 keV line. The inset shows the SRIM simulated P implant profiles.

Image of FIG. 3.
FIG. 3.

vs for n-type germanium. Isolines are constructed with different maximum active concentrations for the P profiles shown in Fig. 2. The ITRS Roadmap specs are included from the 2009 and 2003 editions. Experimental data from this work, flash (Ref. 31), and laser (Ref. 26) anneal are shown, all for a 15 keV P implant.

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/content/aip/journal/apl/96/23/10.1063/1.3452345
2010-06-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/23/10.1063/1.3452345
10.1063/1.3452345
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