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Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments
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10.1063/1.3436561
/content/aip/journal/apl/96/24/10.1063/1.3436561
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3436561

Figures

Image of FIG. 1.
FIG. 1.

(a) Cartoon depicting the measurement setup (b) TLM structures with varying widths and distance between the contact pads are used to extract the conductivity and its change with stress.

Image of FIG. 2.
FIG. 2.

Stack details for the channel grown on silicon (left). Linear enhancement in conductivity with uniaxial tension upto 250 MPa was achieved without cracking which is 5× higher than the maximum stress achieved on a III-V substrate.

Image of FIG. 3.
FIG. 3.

Predicted mobility enhancement in -type (a) and -type (b) semiconductors using extracted piezoresistance coefficients. Among III-V candidates GaSb appears promising for hole mobility, while InGaAs maintains it superiority in electron mobility.

Tables

Generic image for table
Table I.

Summary of the piezoresistance coefficient extracted from previous papers and this work for current flow along direction on a (001) substrate. A value corresponds to enhancement with compression while − value means enhancement with tension.

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/content/aip/journal/apl/96/24/10.1063/1.3436561
2010-06-17
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3436561
10.1063/1.3436561
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