Full text loading...
(a) Cartoon depicting the measurement setup (b) TLM structures with varying widths and distance between the contact pads are used to extract the conductivity and its change with stress.
Stack details for the channel grown on silicon (left). Linear enhancement in conductivity with uniaxial tension upto 250 MPa was achieved without cracking which is 5× higher than the maximum stress achieved on a III-V substrate.
Predicted mobility enhancement in -type (a) and -type (b) semiconductors using extracted piezoresistance coefficients. Among III-V candidates GaSb appears promising for hole mobility, while InGaAs maintains it superiority in electron mobility.
Summary of the piezoresistance coefficient extracted from previous papers and this work for current flow along direction on a (001) substrate. A value corresponds to enhancement with compression while − value means enhancement with tension.
Article metrics loading...