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Optical absorption measurements before (broken line) and after (solid line) exposure to vapors at . Optical absorption improves with exposure. The inset displays SEM images of films before and after treatment. The white scale bars represent 200 nm.
(a) Light and dark current-voltage and (b) dark capacitance-voltage curves for optimized CdTe Schottky devices fabricated from spun-cast colloidal nanorods. Light curves were measured under simulated AM1.5G conditions. Photovoltaic parameters are as follows: , 540 mV, fill-factor 45.5%, PCE 5.3%. Adjusted for spectral mismatch, is , and PCE is 5.0%. C-V characteristics, taken at 50 Hz, are typical for a Schottky diode and suggest a carrier concentration around .
External quantum efficiency for a champion CdTe Schottky device fabricated from spun-cast colloidal nanorods compared with optical absorption (a) and film thickness (b).
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