1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
CdTe Schottky diodes from colloidal nanocrystals
Rent:
Rent this article for
USD
10.1063/1.3440384
/content/aip/journal/apl/96/24/10.1063/1.3440384
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3440384
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Optical absorption measurements before (broken line) and after (solid line) exposure to vapors at . Optical absorption improves with exposure. The inset displays SEM images of films before and after treatment. The white scale bars represent 200 nm.

Image of FIG. 2.
FIG. 2.

(a) Light and dark current-voltage and (b) dark capacitance-voltage curves for optimized CdTe Schottky devices fabricated from spun-cast colloidal nanorods. Light curves were measured under simulated AM1.5G conditions. Photovoltaic parameters are as follows: , 540 mV, fill-factor 45.5%, PCE 5.3%. Adjusted for spectral mismatch, is , and PCE is 5.0%. C-V characteristics, taken at 50 Hz, are typical for a Schottky diode and suggest a carrier concentration around .

Image of FIG. 3.
FIG. 3.

External quantum efficiency for a champion CdTe Schottky device fabricated from spun-cast colloidal nanorods compared with optical absorption (a) and film thickness (b).

Loading

Article metrics loading...

/content/aip/journal/apl/96/24/10.1063/1.3440384
2010-06-15
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: CdTe Schottky diodes from colloidal nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3440384
10.1063/1.3440384
SEARCH_EXPAND_ITEM