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Calculated electronic band diagrams of the InAlN/GaN HFET structures with various in layer: solid line for ; dashed line for ; dotted line for ; and dashed-dotted line for .
dc transfer characteristics of InAlN/GaN HFETs with various in layer: (a) , (b) , and (c) .
Contactless sheet resistance measurement and Hall-effect measurement results for InAlN/GaN HFET structures with varied In composition in barrier layer.
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