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Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation
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10.1063/1.3446891
/content/aip/journal/apl/96/24/10.1063/1.3446891
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3446891
/content/aip/journal/apl/96/24/10.1063/1.3446891
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/content/aip/journal/apl/96/24/10.1063/1.3446891
2010-06-18
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3446891
10.1063/1.3446891
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