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Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation
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10.1063/1.3446891
/content/aip/journal/apl/96/24/10.1063/1.3446891
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3446891

Figures

Image of FIG. 1.
FIG. 1.

Calculated electronic band diagrams of the InAlN/GaN HFET structures with various in layer: solid line for ; dashed line for ; dotted line for ; and dashed-dotted line for .

Image of FIG. 2.
FIG. 2.

dc transfer characteristics of InAlN/GaN HFETs with various in layer: (a) , (b) , and (c) .

Tables

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Table I.

Contactless sheet resistance measurement and Hall-effect measurement results for InAlN/GaN HFET structures with varied In composition in barrier layer.

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/content/aip/journal/apl/96/24/10.1063/1.3446891
2010-06-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3446891
10.1063/1.3446891
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