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(a) A scanning tunneling microscope picture of In chains at RT . (b) Calculated band structure along and across the In chains. Along the direction the three electronic bands , , and cross the Fermi level, which produces metallic character. (c) IR transmittance of two differently prepared samples at RT with electrical field polarized parallel (red squares and blue triangles) and perpendicular (black circles) to the In-atom chains, respectively. The 100% line (gray dots) reveals the stability of the system right before the experiments.
(Left) The metal to insulator transition of In wires on Si (the transition from at RT to at LT) shown by the two different IR transmittance spectra (both for polarization parallel to chains) together with the RHEED patterns. (Right) Optimized structures for the two phases as obtained in our calculations. Unit cells are indicated by solid lines. The structural transition proceeds via the dimerization of the outer In rows together with a shear distortion of neighboring zigzag chains (Ref. 3).
LT relative IR transmittance of the phase for parallel (red circles and triangles) and perpendicular (blue) polarization. For parallel direction, spectra from two different samples are shown. The insets show the calculated band structure of the phase near and along with the assignments of the different transitions as obtained from our theoretical analysis, and the calculated optical conductivity spectrum (with Gaussian broadening of 50 meV).
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