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Resistive switching behaviors of ZnO nanorod layers
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10.1063/1.3453450
/content/aip/journal/apl/96/24/10.1063/1.3453450
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3453450
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Figures

Image of FIG. 1.
FIG. 1.

(a) A cross-sectional SEM image of vertically aligned ZnO NRLs fabricated on ITO substrates. (b) XRD patterns of ZnO NRLs deposited on ITO substrates and the inset shows the high resolution TEM image of ZnO NRs.

Image of FIG. 2.
FIG. 2.

The Pt/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior under which the positive bias induces a LRS and the negative bias resets a HRS.

Image of FIG. 3.
FIG. 3.

(a) The evolution of switching voltages including V-set and V-reset during the 120 resistive switching cycles. (b) The evolution of resistance of HRS and LRS. (c) The nonvolatile property of both HRS and LRS under a stress bias of 100 mV at room temperature.

Image of FIG. 4.
FIG. 4.

(a) The XPS spectra of for ZnO NRLs. (b) The PL spectra of the ZnO NRLs at room temperature.

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/content/aip/journal/apl/96/24/10.1063/1.3453450
2010-06-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive switching behaviors of ZnO nanorod layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3453450
10.1063/1.3453450
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