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DLOS spectra at 300 K for the N-face (○) and Ga-face (△) samples. The fits to the data (lines) were generated using Lucovsky's model. The carbon associated level at is absent in the N-face sample while the -related and levels are present in both crystal polarities.
Steady-state photocapacitance spectra of rf-plasma assisted MBE-grown N-face (solid line) and Ga-face (dashed line) -GaN Schottky diodes at 300 K. The inset reveals more detail about the low energy spectrum of the N-face sample revealing two low concentration levels at and (determined from the onsets in the SSPC) not previously observed in Ga-face samples.
(a) DLTS spectra of rf-plasma assisted MBE-grown N-face (solid line) and Ga-face (dashed line) -GaN Schottky diodes for the rate window. (b) Arrhenius plot for the different deep levels corresponding to the peaks from each rate window for each sample.
Table of trap energy levels and concentrations in MBE-grown Ga- and N-face -GaN.
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