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Impact of N- and Ga-face polarity on the incorporation of deep levels in -type GaN grown by molecular beam epitaxy
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10.1063/1.3453660
/content/aip/journal/apl/96/24/10.1063/1.3453660
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3453660

Figures

Image of FIG. 1.
FIG. 1.

DLOS spectra at 300 K for the N-face (○) and Ga-face (△) samples. The fits to the data (lines) were generated using Lucovsky's model. The carbon associated level at is absent in the N-face sample while the -related and levels are present in both crystal polarities.

Image of FIG. 2.
FIG. 2.

Steady-state photocapacitance spectra of rf-plasma assisted MBE-grown N-face (solid line) and Ga-face (dashed line) -GaN Schottky diodes at 300 K. The inset reveals more detail about the low energy spectrum of the N-face sample revealing two low concentration levels at and (determined from the onsets in the SSPC) not previously observed in Ga-face samples.

Image of FIG. 3.
FIG. 3.

(a) DLTS spectra of rf-plasma assisted MBE-grown N-face (solid line) and Ga-face (dashed line) -GaN Schottky diodes for the rate window. (b) Arrhenius plot for the different deep levels corresponding to the peaks from each rate window for each sample.

Tables

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Table I.

Table of trap energy levels and concentrations in MBE-grown Ga- and N-face -GaN.

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/content/aip/journal/apl/96/24/10.1063/1.3453660
2010-06-18
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3453660
10.1063/1.3453660
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