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(a) is the schematic of the TBPV architecture and light illumination (longitudinal section) and (b) is a photographic image of the TBPV device. Since the closed end face is silvered by Al, the light will reflect on this curved end face and continue to transmit back up the tube to be absorbed. (c) Comparison of the for TBPV and planar PV as a function of the incident angle.
(a) A comparison of the solar spectrum as it transmits through the layers of the two PVs. The curve (two transmissions) corresponds to the solar energy remaining after a single reflection through a planar device. The curve (ten transmissions) represents the remaining solar energy after the light is transmitted down a TBPV once. (b) The transmission spectrum of P3HT:PCBM, and PEDOT used to compute the curves of (a). (c) Shows that the energy absorbed by multiple transmissions through the P3HT:PCBM layer (bottom line) in the TBPV grows quickly as a function of internal reflections in the device. The remaining light energy in tube (top line), shows the corresponding decrease to zero.
(a) EQE vs wavelength of the two PVs: (down triangle) planar PV with conductive PEDOT/P3HT:PCBM/Al; (upper triangle) TBPV with conductive PEDOT/P3HT:PCBM/Al. The improvement of current generated by this EQE is about 30% relative to planar PV. (its corresponding current density changes from 3.1 to ). (b) J-V characteristics of TBPV and planar PV (center), and active area explanations (bottom right corner). The current density of short circuit is defined as , where is the IAA. This is a device current density. The power conversion efficiencies of the solar cells are given as: TBPV , , , and ; planar PV , , , and . Current improvement is 25%, and efficiency improvement is 15%.
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