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Influence of positive bias stress on plasma improved InGaZnO thin film transistor
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10.1063/1.3453870
/content/aip/journal/apl/96/24/10.1063/1.3453870
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3453870

Figures

Image of FIG. 1.
FIG. 1.

Transfer characteristics of -plasma treated and untreated a-IGZO TFTs, measured with forward and reverse sweeping. The transistor works in linear operation region when the is higher than the drain voltage of 1 V.

Image of FIG. 2.
FIG. 2.

(a) Transfer curves as a function of bias stress duration for the untreated a-IGZO TFTs, measured with reverse sweeping. The bias stress conditions are and . Inset shows the plot of the shift vs the logarithmic stress time. And, the variations in SS (b) and mobility (c) as a function of bias stress duration, respectively.

Image of FIG. 3.
FIG. 3.

(a) Transfer curves as a function of bias stress duration for the -plasma treated a-IGZO TFTs, measured with reverse sweeping. The bias stress conditions are and . The strange hump is observed in the subthreshold region while the duration of bias stress being over 300 s. Lower right inset shows the plot of the shift (for ) vs the logarithmic stress time. (b) The variations in mobility as a function of bias stress duration.

Image of FIG. 4.
FIG. 4.

Transistor curves for -treated TFTs (with device dimension of ) under different gate-bias stress conductions, , 30, and 50 V and .

Tables

Generic image for table
Table I.

Device parameters extracted from the transfer curves in Fig. 1, including threshold voltage , field-effect mobility , subthreshold swing (SS), and the value of shift in hysteresis loops .

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/content/aip/journal/apl/96/24/10.1063/1.3453870
2010-06-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3453870
10.1063/1.3453870
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