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Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors
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10.1063/1.3453871
/content/aip/journal/apl/96/24/10.1063/1.3453871
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3453871
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Photocurrent response of the AlGaN/GaN MSM photodetector at 5 V bias and a chopper frequency of 40 Hz.

Image of FIG. 2.
FIG. 2.

Frequency-dependency of photocurrent of the AlGaN/GaN MSM photodetector. The inset shows photocurrent response of the AlGaN MSM photodetector.

Image of FIG. 3.
FIG. 3.

Simulated electric field distribution of the AlGaN/GaN MSM photodetector under 5 V bias.

Image of FIG. 4.
FIG. 4.

Energy band diagram of the AlGaN/GaN MSM photodetector showing transport processes of photogenerated electrons.

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/content/aip/journal/apl/96/24/10.1063/1.3453871
2010-06-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3453871
10.1063/1.3453871
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