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Solution-processed zinc–tin oxide thin-film transistors with low interfacial trap density and improved performance
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10.1063/1.3454241
/content/aip/journal/apl/96/24/10.1063/1.3454241
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3454241

Figures

Image of FIG. 1.
FIG. 1.

Device cross section for ZTO TFTs.

Image of FIG. 2.
FIG. 2.

Transfer curves for ZTO TFTs in different position and with different ZTO prebake conditions (a) sample 1, for 10 min; (b) sample 2, for 10 min; and (c) sample 3, for 30 min.

Image of FIG. 3.
FIG. 3.

Bias stress measurement at for samples with different ZTO prebake conditions.

Image of FIG. 4.
FIG. 4.

Transfer curves before and after 5 min of bias stress for (a) sample 1 and (b) sample 3.

Image of FIG. 5.
FIG. 5.

(a) Output characteristics and (b) transfer curve at elevated carrier concentrations for the center device of sample 3.

Tables

Generic image for table
Table I.

Summary of device characteristics (center device) for samples with different ZTO prebake conditions.

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/content/aip/journal/apl/96/24/10.1063/1.3454241
2010-06-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Solution-processed zinc–tin oxide thin-film transistors with low interfacial trap density and improved performance
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3454241
10.1063/1.3454241
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