Full text loading...
Device cross section for ZTO TFTs.
Transfer curves for ZTO TFTs in different position and with different ZTO prebake conditions (a) sample 1, for 10 min; (b) sample 2, for 10 min; and (c) sample 3, for 30 min.
Bias stress measurement at for samples with different ZTO prebake conditions.
Transfer curves before and after 5 min of bias stress for (a) sample 1 and (b) sample 3.
(a) Output characteristics and (b) transfer curve at elevated carrier concentrations for the center device of sample 3.
Summary of device characteristics (center device) for samples with different ZTO prebake conditions.
Article metrics loading...