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AFM images of the cross-linked PbS NC only and cross-linked composite films casted from solutions with different wt. ratios of PbS NCs and molecules. The upper images (a), (b), (c), and (d) indicate the morphology of the cross-linked films prepared with PbS NC only and different wt. ratios of 50:1, 30:1, and 10:1 respectively. The lower images (e), (f), (g), and (h) which, respectively, corresponding to the morphology images (a), (b), (c), and (d), represent the in situ phase images. All images have the scan range of .
Measured current characteristics under one sun of simulated AM 1.5 G solar irradiation of the bilayer device A (black; square) and the bulk heterojunction devices B (blue; circle), C (red; up-triangle), and D (green; down-triangle) with different wt. ratios between PbS NCs and . Inset shows the cross-section SEM images of (a) the bilayer device A and (b) the bulk heterojunction device C.
Measured EQEs spectra of the bilayer device A (black; square) and the bulk heterojunction devices B (blue; circle), C (red; up-triangle), and D (green; down-triangle) with different wt. ratios between PbS NCs and . Inset shows the estimated lower limit of the IQEs with the measured EQE and device reflectance data.
Summary of device structures used in this study. The devices have a general structure of ITO/PbS-BDT(40 nm)/composite layer (40 nm)/BM (40 nm)/LiF (1 nm)/Al.
Summary of the performance of bilayer and bulk heterojunction devices. The series resistances of the devices are extracted at 1 V forward bias in dark condition.
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