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Schematic conduction band diagram and moduli squared of the relevant wave functions of injector/active/injector parts in the active region. An electric field of 41 kV/cm was applied to align the structure. The InGaAs/InAlAs layer sequence of one period of the active layers, in angstroms, starting from the injection barrier (toward the right side) is as follows: 37/31/27/75/7/58/15/52/18/41/15/38/16/35/17/34/20/34/23/34/28/33 where InAlAs barrier layers are in bold, InGaAs QW layers in roman, and doped layers (Si, ) are underlined.
Intersubband EL spectra of the mesa device for various voltages. The inset shows the FWHM of the spectra, for the dual-upper device (solid square) as well as for the BTC (solid circle), described in Ref. 12, and the bound-to-bound devices (solid triangle), respectively, as a function of voltage.
Pulsed current-light output characteristics of the -wide and 3.0-mm-long, HR-coated, buried heterostructure laser with a thick gold film at different heat sink temperatures. The voltage-current characteristic at 300 K is also shown.
Threshold current density and slope efficiency at threshold as functions of heat sink temperature in pulsed operation. Both dashed curves represent fits by the empirical exponential functions, . The inset shows the laser spectra at various current.
(a) cw current-light output characteristics of the laser at different heat sink temperatures. The voltage-current characteristics at 300 K are also shown. The inset shows threshold current density as functions of heat sink temperature in cw operation. (b) The spectra in both subthreshold and above-threshold operation of the dual-upper laser at 300 K. The subthreshold spectrum of the bound-to-bound device at 300 K is also shown as a comparison.
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