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High-performance, homogeneous broad-gain quantum cascade lasers based on dual-upper-state design
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10.1063/1.3455102
/content/aip/journal/apl/96/24/10.1063/1.3455102
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3455102
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic conduction band diagram and moduli squared of the relevant wave functions of injector/active/injector parts in the active region. An electric field of 41 kV/cm was applied to align the structure. The InGaAs/InAlAs layer sequence of one period of the active layers, in angstroms, starting from the injection barrier (toward the right side) is as follows: 37/31/27/75/7/58/15/52/18/41/15/38/16/35/17/34/20/34/23/34/28/33 where InAlAs barrier layers are in bold, InGaAs QW layers in roman, and doped layers (Si, ) are underlined.

Image of FIG. 2.
FIG. 2.

Intersubband EL spectra of the mesa device for various voltages. The inset shows the FWHM of the spectra, for the dual-upper device (solid square) as well as for the BTC (solid circle), described in Ref. 12, and the bound-to-bound devices (solid triangle), respectively, as a function of voltage.

Image of FIG. 3.
FIG. 3.

Pulsed current-light output characteristics of the -wide and 3.0-mm-long, HR-coated, buried heterostructure laser with a thick gold film at different heat sink temperatures. The voltage-current characteristic at 300 K is also shown.

Image of FIG. 4.
FIG. 4.

Threshold current density and slope efficiency at threshold as functions of heat sink temperature in pulsed operation. Both dashed curves represent fits by the empirical exponential functions, . The inset shows the laser spectra at various current.

Image of FIG. 5.
FIG. 5.

(a) cw current-light output characteristics of the laser at different heat sink temperatures. The voltage-current characteristics at 300 K are also shown. The inset shows threshold current density as functions of heat sink temperature in cw operation. (b) The spectra in both subthreshold and above-threshold operation of the dual-upper laser at 300 K. The subthreshold spectrum of the bound-to-bound device at 300 K is also shown as a comparison.

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/content/aip/journal/apl/96/24/10.1063/1.3455102
2010-06-16
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance, homogeneous broad-gain quantum cascade lasers based on dual-upper-state design
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3455102
10.1063/1.3455102
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