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Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation
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10.1063/1.3455317
/content/aip/journal/apl/96/24/10.1063/1.3455317
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3455317
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of CB and VB edges of SOI with NOX (band bending is neglected), showing competing multiphoton HCI processes. (b) TD-SHG data (open black circle) and fitting (red curves) for substrate (top panel) and SOI samples with DOX (bottom four panels) at incident laser power 200 mW.

Image of FIG. 2.
FIG. 2.

(a) Comparison of TD-SHG from 2 nm SOI with NOX (filled black square) with that after wiping the free surface or blocking the laser for a few minutes (empty red circle). (b) Fitting of the data (black circles) according to Eq. (2) (red curve) for 4 nm SOI with DOX at incident laser power 150 mW. (c) Scaling of time constant and visible HF defect density with . (d) Laser power dependence of time constant from the TD-SHG data for 4 nm SOI with DOX.

Image of FIG. 3.
FIG. 3.

Optical microscope images of HF defects from samples with different SOI thickness after HF soaking.

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/content/aip/journal/apl/96/24/10.1063/1.3455317
2010-06-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/24/10.1063/1.3455317
10.1063/1.3455317
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