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Visualization of Tm dopant atoms diffused out of GaN quantum dots
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View: Figures


Image of FIG. 1.
FIG. 1.

High-resolution HAADF-STEM images of GaN QDs and wetting layers embedded in AlN. (a) Undoped GaN dot, (b) Tm doped GaN dot, and (c) a GaN wetting layer between Tm doped GaN QDs. On (b) and (c) bright spots in AlN correspond to Al columns containing one or several Tm dopant atoms.

Image of FIG. 2.
FIG. 2.

[(a) and (b)] Two experimental HAADF-STEM images, centered on a given atomic column containing a Tm atom, taken at two different defocus (0 nm and 5 nm, respectively). [(c) and (d)] Intensity line profiles across the columns taken on images (a) and (b). The sketches illustrate the influence of the defocus on the intensity distribution. (e) Simulated visibilities of a Tm single atoms positioned at distance and from the entrance surface, defined by either the maximum intensity or the integrated HAADF intensity in a 0.3 nm disk .

Image of FIG. 3.
FIG. 3.

(a) Detail of Fig. 1(b) extracted near the Tm rich layer situated 3–4 ML above the GaN dot. (b) Profiles taken along the lines defined by the arrows in Fig. 3(a). Profile (1) is taken in AlN layer (no Tm) and profile (2) in the dopant rich layer. (c) Integrated visibilities for columns referenced A to F taken at different focus. The diameter of the integrated area is 0.3 nm.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Visualization of Tm dopant atoms diffused out of GaN quantum dots