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Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure
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10.1063/1.3456375
/content/aip/journal/apl/96/25/10.1063/1.3456375
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/25/10.1063/1.3456375
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Design of the Si/SiGe heterostructure for both p-channel and n-channel FETs. (b) The corresponding energy band diagram.

Image of FIG. 2.
FIG. 2.

The drain-source current of a (a) p-channel and an (b) n-channel FET at drain-to-source bias −10 mV and (b) , respectively. The measurement temperature was 4.2 K.

Image of FIG. 3.
FIG. 3.

Longitudinal and Hall resistance at 0:3 K. Filling factors of prominent quantum Hall states are labeled.

Image of FIG. 4.
FIG. 4.

(a) Transfer curve of an inverter consisting of a p-channel FET and an n-channel FET at 4:2 K. The supply voltage is 4 V. The inset shows the drain-source current-voltage characteristics of a p-channel FET at 4.2 K. (b) A schematic of the inverter circuit.

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/content/aip/journal/apl/96/25/10.1063/1.3456375
2010-06-21
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/25/10.1063/1.3456375
10.1063/1.3456375
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