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Typical loading-unloading lines at a fixed loading-unloading rate of for various loads of 350, 500, and 700 mN. Regions of constant depth with releasing load are continuous-line-encircled in the unloading curve. Pop-in in the loading curve is also dotted-line-encircled.
Typical Raman spectra at the (a) outside and (b) center regions, as shown in the corresponding insets of indented spot, exhibiting various phases of Si using a load of 700 mN and a loading-unloading rate of .
Typical loading-unloading lines at a fixed load of 500 mN and various loading-unloading rate of (a) , (b) , (c) , and (d) in (100) substrate. The encircled regions in the unloading curve are called as pop-out burst.
Variation in force with displacement for silicon films at various indentation velocities of , 60, 80, and . Snap shots of the simulation indicating different stages of deformation (a) and (b). Corresponding load-unload curves are also indicated.
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