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Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si
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10.1063/1.3456380
/content/aip/journal/apl/96/25/10.1063/1.3456380
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/25/10.1063/1.3456380
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical loading-unloading lines at a fixed loading-unloading rate of for various loads of 350, 500, and 700 mN. Regions of constant depth with releasing load are continuous-line-encircled in the unloading curve. Pop-in in the loading curve is also dotted-line-encircled.

Image of FIG. 2.
FIG. 2.

Typical Raman spectra at the (a) outside and (b) center regions, as shown in the corresponding insets of indented spot, exhibiting various phases of Si using a load of 700 mN and a loading-unloading rate of .

Image of FIG. 3.
FIG. 3.

Typical loading-unloading lines at a fixed load of 500 mN and various loading-unloading rate of (a) , (b) , (c) , and (d) in (100) substrate. The encircled regions in the unloading curve are called as pop-out burst.

Image of FIG. 4.
FIG. 4.

Variation in force with displacement for silicon films at various indentation velocities of , 60, 80, and . Snap shots of the simulation indicating different stages of deformation (a) and (b). Corresponding load-unload curves are also indicated.

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/content/aip/journal/apl/96/25/10.1063/1.3456380
2010-06-24
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/25/10.1063/1.3456380
10.1063/1.3456380
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