Limiting and overlimiting conductance in field-effect gated nanopores
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(a) Schematic of a gated nanopore device with cylindrical symmetry (not to scale). Some device parameters include: pore radius ; top and bottom oxide thickness 100 nm each; gate electrode thickness 100 nm; side-wall gate oxide thickness 2 nm; reservoir size in both width and thickness; (b) vs characteristics for constant values that range from −2.8 to 2.8 V at a step of 0.4 V. The dashed curve corresponds to the current at symmetric bias conditions, ; (c) vs characteristics for constant values that range from 0 to 4 V at a step of 1 V. The specific values are labeled at each curve. The dashed curve again corresponds to the current at symmetric bias conditions, ; and (d) vs characteristics for constant values that range from 0 to 2 V at a step of 0.5 V.
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(a) Simulated curve for a constant of 1.5 V. Four specific bias points are marked for different biases, 0.1 V (A), 1.5 V (B), 3.0 V (C), and 4.0 V (D), respectively. The two broken curves are from additional simulations with higher viscosities, and ; (b) normalized electrostatic potential along the nanopore longitudinal axis for the four bias points, where the shaded region indicates the channel portion; (c) profiles of the normalized ion concentration, , for the four bias points, where the gray scale corresponds to logarithmic magnitude; and (d) vector plots of fluid velocity distribution for the four bias points, where the velocity scale references are given for both radial and vertical directions in each subfigure.
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