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(a) Schematic cross-section and (b) scanning electron microscopic image of triode switch. Source and drain electrodes consist of indifferent metals, Pt and Ru, respectively, and gate electrode consists of oxidizable metal of Cu. HSQ is used as inter-layer dielectric. [(c) and (d)] Gate operation of triode switch. Drain current in a log scale is plotted for (c). Drain current, gate current , and source current are plotted in a linear scale for (d). Positive or negative gate voltage was applied. Drain voltage was set to 1 mV to observe ON or OFF state.
Drain current-voltage characteristics for ON or OFF resistance state. Gate and source electrodes were grounded. was swept from to −0.1 V.
Cycling endurance. Drain current was measured at after turning on or off by applying a positive or negative . Drain voltage was set to 1 mV. Gate current was measured at a negative for each cycle.
Observation of Cu precipitate on . Element analysis is made by energy dispersive x-ray (EDX) spectroscopy. EDX signal from (a) precipitate or from (b) reference of on Si substrate. Inset: Scanning electron microscopic image of device. Positive gate voltage of 0.4 V is applied to drain for several seconds, which results in growing extensive growth and pushing up drain electrode.
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