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The influence of and passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination
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10.1063/1.3435482
/content/aip/journal/apl/96/26/10.1063/1.3435482
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3435482

Figures

Image of FIG. 1.
FIG. 1.

Diagram of the HIZO TFTs adopting an etch stopper and the measurement schemes along with an incoming light provided by the halogen lamp.

Image of FIG. 2.
FIG. 2.

Graph of the absolute value of with respect to NBIS time. The collected data were fitted with the stretched exponential equation (solid lines).

Image of FIG. 3.
FIG. 3.

SIMS depth profiles of hydrogen in and . The latter contains a larger amount of H by approximately an order of magnitude.

Tables

Generic image for table
Table I.

Initial transfer characteristics of the devices.

Generic image for table
Table II.

Stretched exponential parameters in the stressed devices.

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/content/aip/journal/apl/96/26/10.1063/1.3435482
2010-06-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3435482
10.1063/1.3435482
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