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Diagram of the HIZO TFTs adopting an etch stopper and the measurement schemes along with an incoming light provided by the halogen lamp.
Graph of the absolute value of with respect to NBIS time. The collected data were fitted with the stretched exponential equation (solid lines).
SIMS depth profiles of hydrogen in and . The latter contains a larger amount of H by approximately an order of magnitude.
Initial transfer characteristics of the devices.
Stretched exponential parameters in the stressed devices.
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