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Ion-sculpting of nanopores in amorphous metals, semiconductors, and insulators
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Real-time fluence dependence of a pore radius during ion sculpting with 3 keV at ambient temperature under ion flux of . The inset shows, in an inverted gray scale, a diffraction ring from the closed-in region of the sputtered sample confirming its amorphousness. (b) and (c) are TEM images of the pore in (a) before and after ion irradiation, respectively.

Image of FIG. 2.
FIG. 2.

TEM images of pores after 1.2 keV normal-incidence irradiation (a) , surface becomes amorphous; and (b) , surface remains crystalline. Initial pore perimeters are indicated by the dotted white contours. Irradiation above the dynamic transition temperature preserves the crystallinity of the pore during irradiation and results in undetectable mass accretion at the pore edge. The ion flux was with a total dose of (a) and (b) . A third pore (not shown) was closed completely with a total fluence of below the transition. The accreted material in (a) and in the completely closed pore was confirmed to be amorphous by TEM diffraction.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ion-sculpting of nanopores in amorphous metals, semiconductors, and insulators