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Schematic representation of (a) MTJ stack after patterning into stripes and backfilled with . White arrow on the side of the slab shows pinning direction. Dark regions are removed by mechanical polishing and FIB. (b) Enlargement of circled region in (a), showing the probe, electron beam, magnetic field, and pinned and free layer geometries in reference to the specimen position. Beam entrance surface is the magnetic north. All numbers have units of nanometer.
Image shows devices 30 through 38. The color coded circles correspond to the device specific conductance ( vs ) curves. The conductances are normalized by the junction areas. Solid and dotted curves correspond to AP and P configuration, respectively. The inset is an enlargement of the boxed low-voltage bias region where the voltage is plotted in log scale.
(a) TEM holder with a probe mounted on a built-in piezotube. (b) Probe approaching devices region. (c) Contact is established with one of the MTJs.
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