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Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
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10.1063/1.3456379
/content/aip/journal/apl/96/26/10.1063/1.3456379
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3456379
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical bipolar resistance switching I–V curves of Ti/IGZO/TiN, measured with grounded (a) TiN electrode (the lower right inset plots the resistance switching characteristics detected at a reading voltage of 0.1 V during continuous I-V sweep of 100 cycles), and (b) Ti electrode.

Image of FIG. 2.
FIG. 2.

(a) Cell area dependence of the resistance value in HRS and LRS. (b) Schematic diagrams of driving mechanism of bipolar switching through the electrochemical reaction to form/disrupt the conducting filaments for LRS/HRS during set/reset process.

Image of FIG. 3.
FIG. 3.

(a) Unipolar behavior in Pt/IGZO/TiN cell, measured by applying bias on Pt electrode. Lower right inset plots the resistance switching characteristics detected at a reading voltage of 0.1 V during continuous I-V sweep of 100 cycles. (b) Bipolar behavior in Pt/IGZO/TiN cell, measured by applying bias on TiN electrode.

Image of FIG. 4.
FIG. 4.

Schematic diagrams of driving mechanism of unipolar switching to form/disrupt the conducting filaments during set/reset process, where the disruption of filament is caused by the Joule heating enhanced oxidation.

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/content/aip/journal/apl/96/26/10.1063/1.3456379
2010-06-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3456379
10.1063/1.3456379
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