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High extraction efficiency GaN-based light-emitting diodes on embedded nanorod array and nanoscale patterned sapphire substrate
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10.1063/1.3456385
/content/aip/journal/apl/96/26/10.1063/1.3456385
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3456385
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of LED with a NPSS and a PQC structure.

Image of FIG. 2.
FIG. 2.

(a) Top-view and (b) cross-section SEM images of sapphire surface with a NPSS and (c) top-view AFM image of an n-GaN surface with a PQC.

Image of FIG. 3.
FIG. 3.

(a) Current-voltage and (b) intensity-current characteristics of conventional LED, LED with a NPSS, LED with a PQC structure on an n-GaN layer, and LED with a NPSS and a PQC structure on an n-GaN layer.

Image of FIG. 4.
FIG. 4.

The TEM images of GaN/sapphire interface for the GaN epilayer grown on a (a) flat sapphire substrate and (b) a NPSS and a PQC structure on an n-GaN layer. (c) The dislocation bending phenomenon with visible turning points on GaN epilayer with a NPSS and a PQC structure on an n-GaN layer.

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/content/aip/journal/apl/96/26/10.1063/1.3456385
2010-07-02
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3456385
10.1063/1.3456385
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