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Schematic diagram of LED with a NPSS and a PQC structure.
(a) Top-view and (b) cross-section SEM images of sapphire surface with a NPSS and (c) top-view AFM image of an n-GaN surface with a PQC.
(a) Current-voltage and (b) intensity-current characteristics of conventional LED, LED with a NPSS, LED with a PQC structure on an n-GaN layer, and LED with a NPSS and a PQC structure on an n-GaN layer.
The TEM images of GaN/sapphire interface for the GaN epilayer grown on a (a) flat sapphire substrate and (b) a NPSS and a PQC structure on an n-GaN layer. (c) The dislocation bending phenomenon with visible turning points on GaN epilayer with a NPSS and a PQC structure on an n-GaN layer.
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