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(a) characteristics of the samples in ITO/PEDOT:PSS/P3HT:PCBM/BCP/Al structure. The thickness of BCP is 0, 1, 2, 5, 10, and 20 nm. (b) characteristics of the devices measured in dark. The inset shows the schematic device configuration.
characteristics of the devices with different cathode buffer layers.
XPS spectra of the devices with ion etching for 120 and 180 s: (a) and (b) core levels.
Device performance as a function of the BCP thickness and cathode buffer layer in BHJ solar cells.
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