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Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon
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10.1063/1.3457468
/content/aip/journal/apl/96/26/10.1063/1.3457468
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3457468
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Band diagram and simplified bandstructure of Si showing tunneling (solid arrows) into and valleys, the first and second channels in our model. Tunnel-injected carriers lose energy to phonons as they drift (dotted arrows) before impact ionizing (vertical double arrows).

Image of FIG. 2.
FIG. 2.

Equivalent circuit for diode measurements.

Image of FIG. 3.
FIG. 3.

Noise ratio as a function of the first channel . The 2 and 3 channel curves come from Eq. (3). 1N749, 1N750, and 1N751 are silicon diodes with n-doping of , , and respectively. The measured data for these devices is taken from Ref. 5.

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/content/aip/journal/apl/96/26/10.1063/1.3457468
2010-06-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3457468
10.1063/1.3457468
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