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Band diagram and simplified bandstructure of Si showing tunneling (solid arrows) into and valleys, the first and second channels in our model. Tunnel-injected carriers lose energy to phonons as they drift (dotted arrows) before impact ionizing (vertical double arrows).
Equivalent circuit for diode measurements.
Noise ratio as a function of the first channel . The 2 and 3 channel curves come from Eq. (3). 1N749, 1N750, and 1N751 are silicon diodes with n-doping of , , and respectively. The measured data for these devices is taken from Ref. 5.
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