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Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates
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10.1063/1.3457783
/content/aip/journal/apl/96/26/10.1063/1.3457783
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3457783
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Reverse-bias dark-current characteristics are shown for area sapp-APD (dashed line) and dark-current and photocurrent showing maximum gain of 14 000 for FS-GaN-APDs. Dark current and photocurrent are shown on the left axis and gain is shown on the right axis. The inset displays a cross-sectional sketch of the APD.

Image of FIG. 2.
FIG. 2.

(a) Reverse-bias dark-current density and (b) gain, both as a function of area, are shown for the sapp-APDs and FS-GaN-APDs.

Image of FIG. 3.
FIG. 3.

SPDE efficiency is plotted as a function of ac-bias to dc-bias ratio for FS-GaN-APDs (under front-illumination) and sapp-APDs (under front- and back-illumination).

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/content/aip/journal/apl/96/26/10.1063/1.3457783
2010-07-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3457783
10.1063/1.3457783
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