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(a) Cross-sectional SCM image of the InGaAs/InP APD structure under an illumination intensity of ; (b) Experimental SCM profile along the growth direction (Y direction) of the APD structure under an illumination of different laser power densities; (c) Calculated dC/dV profile under an illumination intensity of , and the experimental SCM profile under the same condition.
Two-dimensional (a) electron and (b) hole distribution in the InGaAs absorption layer under illumination of ; (c) Carrier distribution along X direction under illumination, and under dark condition (inset).
Inversion depth (upper plot) and experimental SCM signal (lower plot) change with variations in laser power density at the center point of the absorption layer (Y direction). The solid line represents the fitted results.
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