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Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination
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10.1063/1.3457872
/content/aip/journal/apl/96/26/10.1063/1.3457872
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3457872
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional SCM image of the InGaAs/InP APD structure under an illumination intensity of ; (b) Experimental SCM profile along the growth direction (Y direction) of the APD structure under an illumination of different laser power densities; (c) Calculated dC/dV profile under an illumination intensity of , and the experimental SCM profile under the same condition.

Image of FIG. 2.
FIG. 2.

Two-dimensional (a) electron and (b) hole distribution in the InGaAs absorption layer under illumination of ; (c) Carrier distribution along X direction under illumination, and under dark condition (inset).

Image of FIG. 3.
FIG. 3.

Inversion depth (upper plot) and experimental SCM signal (lower plot) change with variations in laser power density at the center point of the absorption layer (Y direction). The solid line represents the fitted results.

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/content/aip/journal/apl/96/26/10.1063/1.3457872
2010-06-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3457872
10.1063/1.3457872
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