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(a) Schematic of the NOT gate design optimized on a square grid, with width. The entire storage array can be constructed by tessellating the element highlighted in black . (b) Micromagnetic simulation showing the initial gate configuration for . A HH-DW is present in the input arm with CW chirality. The system is driven by a globally rotating elliptical field. (c) Sequence of gate configurations illustrating the switching mechanism at different points in the field. The dark gray arrows in the background indicate the field vector.
(a) Experimental results showing three-gate data storage. Top panel: 12 Hz elliptical rotating field . Middle panel: pulse train used to inject DWs into the shift register, synchronized with . Bottom panel: MOKE signal average over 50 field cycles measured after the gate. We observe no transitions during the write stage, and transitions after during readout. Data inversion occurs due to an odd number of gates. (b) Operating margin for the three-gate shift register.
(a) SEM image showing the setup for simultaneous injection of independent data sequences into three rows of five gates. Readout of each wire is obtained by moving the laser spot between the positions marked . Inset: Image of the 15-gate data array, with . (b) Results showing write and read across all three data channels, with no crosstalk or dephasing observed. The delay in the MOKE transitions in wire 1 is a systematic effect due to the readout geometry.
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